| 1. | The effects of fractionation are dependent on total doses and on fractionation procedures .
分次照射的效应取决于总计量和分次方法。 |
| 2. | The total dose increases continuously from the time of arrival of the fallout toward the limiting(infinite time)value .
总剂量从沉降物抵达时开始就不断上升直到极限值（无限时间）。 |
| 3. | Effect of nitrogen implantation technologies on total dose rad - hardness of
材料抗辐照性能的影响 |
| 4. | Semiconductor devices - mechanical and climatic test methods - ionizing radiation total dose
半导体器件.机械和气候试验方法.电离辐射 |
| 5. | Semiconductor devices - mechanical and climatic test methods - part 18 : ionizing radiation total dose
半导体器件.机械和气候试验方法.第18部分:电离辐射 |
| 6. | Semiconductor devices - mechanical and climatic test methods - part 18 : ionizing radiation total dose
半导体装置.机械和气候试验方法.第18部分:电离辐射 |
| 7. | The total dose increases continuously from the time of arrival of the fallout toward the limiting ( infinite time ) value
总剂量从沉降物抵达时开始就不断上升直到极限值（无限时间） 。 |
| 8. | Semiconductor devices - mechanical and climatic test methods - part 18 : ionizing radiation total dose iec 60749 - 18 : 2002 ; german version en 60749 - 18 : 2003
半导体器件.机械和气候试验方法.第18部分:电离辐射 |
| 9. | Total dose effect is simulated for c4007b , cc4007rh and cc4011 devices at different absorbed dose rate by using linear system theory
摘要利用线性响应理论模型模拟c4007b 、 cc4007rh和cc4011器件受不同射线剂量率辐射时的总剂量效应。 |
| 10. | Radiation effects and annealing characteristics have been investigated on different type of domestic and / or imported bipolar operational amplifiers and transistors at five dose rates ranging from 100 to 0 . 0022rad ( si ) / s for the same total doses
摘要对不同类型和型号的国产及进口双极晶体管和运算放大器的不同剂量率的辐照效应及退火特性进行了研究。 |
